沉积温度对氧化锆薄膜显微结构的影响
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作者单位：西北工业大学凝固技术国家重点实验室
中文关键字：沉积温度，磁控溅射，ZrO2薄膜，YSZ薄膜
英文关键字：
中文摘要：采用直流反应磁控溅射工艺在25 ℃和300 ℃沉积温度下分别制备了ZrO2薄膜和YSZ薄膜。结果表明，沉积温度对ZrO2薄膜沉积速率的影响不大，而对YSZ薄膜沉积速率的影响则很大。与YSZ薄膜相比，ZrO2薄膜容易形成结晶态。25 ℃时所制备的ZrO2薄膜为非晶态，300 ℃时则为单斜晶体结构，薄膜的结晶程度随沉积温度的增加而提高。而两种温度下制备的YSZ薄膜均为非晶态薄膜。随着沉积温度的增加，ZrO2薄膜表面变得致密光滑，而YSZ薄膜表面则变得粗糙不平。
英文摘要：ZrO2 films and YSZ films were prepared by DC magnetron sputtering at the deposition temperature of 25 ℃ and 300 ℃ respectively. The results show that the effect of deposition temperature on film growth rate of ZrO2 films is unobvious, while this effect is obvious for YSZ films. Compared with YSZ films, it is more easier for ZrO2 films to form crystalline. The ZrO2 films deposited at room temperature are amorphous but monoclinic structure at 300 ℃ in this paper. However, the structure of YSZ films prepared in this paper are amorphous which is quite different from the ZrO2 films. With the increase of deposition temperature, the surface of ZrO2 films become compacter and smoother, while for YSZ films the surface become more rougher.