213 mm大直径单晶硅直拉法制备过程的热场模拟研究

    Simulation Study of Thermal Field of 213 mm Large-diameter Si Crystal Growing by Czochralski Method

    • 摘要: 基于有限体积法得到单晶炉腔内的温度场,研究加热功率、晶体转速以及坩埚转速对液-固界面的影响。计算结果表明,加热功率对液-固界面及热场影响显著,加热功率的精确控制对于稳定的液-固界面至关重要;在一定范围内,晶体转速的增加会使得液-固界面的位置出现抬升,而坩埚转速对液-固界面的影响不太明显。

       

      Abstract: Based on the finite volume method, the temperature field in the single crystal furnace cavity was obtained, and the influence of heating power, crystal rotation speed and crucible rotation speed on the liquid-solid interface was studied.The calculation results show that the heating power has a significant influence on the liquid-solid interface and the thermal field, and precise control of the heating power is very important for a stable liquid-solid interface; within a certain range, the increase of the crystal rotation speed will cause the liquid-solid interface to move upwards, while the crucible rotation speed has little effect on the liquid-solid interface.

       

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