Abstract: The structure of silicon carbide contains strong covalent bonds, and the bond energy of covalent bonds is as high as 78%. During the sintering process, some sintering aids, external pressure and other conditions need to be added to reduce the bonding strength and make it densified to meet the requirements of the application of silicon carbide ceramics in aerospace, chemical industry, machinery and other fields. The research progress and the application statu of Si C ceramic sintering process were reviewed. Common sintering include pressureless sintering, hot-pressing sintering, hot isostatic sintering and reactive bonding sintering, and the latest sintering processes are microwave sintering, flash sintering, spark plasma sintering and oscillatory pressure sintering. The future research direction of silicon carbide ceramics was prospected.