Zr、Si和V在TiB2(0001)表面上吸附的第一性原理研究

    First-principles Investigation of Zr, Si and V Adsorption on Ti B2(0001) Surface

    • 摘要: 利用第一性原理计算法对Zr、Si和V原子在TiB2(0001)表面的原子结构、吸附性能和电子结构进行了综合性研究。计算结果表明,Zr、V在TiB2(0001)表面吸附时吸附能最低在桥1位,而Si在hcp处吸附的吸附能最低。Zr、Si、V在TiB2(0001)表面吸附的过程中会发生杂化,其主要是由于Zr-4d、Si-3p、V-3p和Ti-3d轨道的贡献。Zr-Ti键、Si-Ti键与V-Ti键主要为共价键,共价键的强度降序为Si-Ti键、Zr-Ti键、V-Ti键。

       

      Abstract: The atomic structures, adsorption properties and electronic structures of Zr, Si and V atoms on Ti B2(0001)surface were comprehensively investigated using first-principles computational approach. The calculated results show that the adsorption energy of Zr and V is lowest at bridge 1 on the surface of Ti B2(0001). However, Si has the lowest adsorption energy at the hcp. Zr, Si and V undergo hybridization during adsorption on the Ti B2(0001) surface, which is mainly due to the contribution of Zr-4d, Si-3p, V-3p and Ti-3d orbitals. The bonding between Zr-Ti, Si-Ti and V-Ti is mainly covalent bonds,the covalent bonds in descending order of strength are Si-Ti, Zr-Ti, V-Ti.

       

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